AON6928 30v dual asymmetric n-channel alphamos general description product summary q1 q2 30v 30v i d (at v gs =10v) 30a 36a r ds(on) (at v gs =10v) <8.2m w <2.9m w r ds(on) (at v gs = 4.5v) <11.5m w <4.4m w 100% uis tested application 100% rg tested symbol v ds v parameter gate-source voltage drain-source voltage absolute maximum ratings t a =25c unless otherwise noted units v v 20 20 ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al 30 v ds max q1 max q2 top view bottom view pin1 dfn5x6 top view bottom view bottom view v gs i dm i as e as v ds spike v spike t j , t stg parameter symbol typ q1 typ q2 max q1 max q2 t 10s 29 24 35 29 steady-state 56 50 67 60 steady-state r q jc 3.3 3 4 3.8 100ns 36 v t c =25c avalanche energy l=0.05mh c c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w thermal characteristics 3.6 maximum junction-to-case t c =25c t c =100c power dissipation a p dsm t a =25c power dissipation b t a =70c p d 31 t c =100c pulsed drain current c continuous drain current g i d 35 12.5 t a =25c gate-source voltage mj avalanche current c continuous drain current a 13 units 46 31 53 a 13 4.3 c w 17 24 33 v 28 20 20 w t a =70c 30 30 36 23 117 a 144 i dsm 2.3 2.7 junction and storage temperature range -55 to 150 rev 0 : nov. 2012 www.aosmd.com page 1 of 10
AON6928 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 1.95 2.5 v 6.8 8.2 t j =125c 9.7 11.6 9.2 11.5 m w g fs 63 s v sd 0.72 1 v i s 30 a c iss 1150 pf c oss 180 pf c rss 105 pf r g 0.55 1.1 1.65 w q g (10v) 20 24 nc q g (4.5v) 9.5 11.4 nc q gs 2.7 nc q gd 5 nc t d(on) 6.5 ns t r 2 ns t 17 ns turn-on delaytime v gs =10v, v ds =15v, r l =0.75 w , r =3 w turn-on rise time turn-off delaytime switching parameters total gate charge v gs =10v, v ds =15v, i d =20a total gate charge gate source charge gate drain charge input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =20a diode forward voltage i s =1a,v gs =0v maximum body-diode continuous current g dynamic parameters r ds(on) static drain-source on-resistance v gs =10v, i d =20a m w v gs =4.5v, i d =20a i dss zero gate voltage drain current m a gate-body leakage current v ds =0v, v gs = 20v v ds =v gs i d =250 m a q1 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v t d(off) 17 ns t f 3.5 ns t rr 8.7 ns q rr 13.5 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s r gen =3 w turn-off delaytime turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature o f 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev 0 : nov. 2012 www.aosmd.com page 2 of 10
AON6928 q1-channel: typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 14 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 4.5v 10v 4v 3.5v 7v 6v 5v 40 voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0 : nov. 2012 www.aosmd.com page 3 of 10
AON6928 q1-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 1ms 100us dc r ds(on) t j(max) =150 c t c =25 c 10 m s 100ms 0 2 4 6 8 10 0 5 10 15 20 25 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =4 c/w rev 0 : nov. 2012 www.aosmd.com page 4 of 10
AON6928 q1-channel: typical electrical and thermal characteristics 17 52 10 0 18 10.0 100.0 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de - rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =67 c/w rev 0 : nov. 2012 www.aosmd.com page 5 of 10
AON6928 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.8 2.2 v 2.4 2.9 t j =125c 3.6 4.4 3.5 4.4 m w g fs 105 s v sd 0.7 1 v i s 36 a c iss 2010 pf c oss 898 pf c rss 124 pf r g 0.9 1.8 2.7 w q g (10v) 36 49 nc q g (4.5v) 17 23 nc q gs 6 nc q gd 8 nc t d(on) 7.5 ns t r 4.0 ns t 37.0 ns q2 electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =10ma, v gs =0v i dss zero gate voltage drain current m a gate-body leakage current v ds =0v, v gs = 20v v ds =v gs i d =250 m a r ds(on) static drain-source on-resistance v gs =10v, i d =20a m w v gs =4.5v, i d =20a forward transconductance v ds =5v, i d =20a diode forward voltage i s =1a,v gs =0v maximum body-diode continuous current g dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =10v, v ds =15v, i d =20a total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =0.75 w , r =3 w turn-on rise time turn-off delaytime t d(off) 37.0 ns t f 7.5 ns t rr 14 ns q rr 20.3 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s r gen =3 w turn-off delaytime turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature o f 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with ta=25 c. rev 0 : nov. 2012 www.aosmd.com page 6 of 10
AON6928 q2-channel: typical electrical and thermal characteristics 0 10 20 30 40 50 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 4.5v 10v 3v 0 2 4 6 8 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) rev 0 : nov. 2012 www.aosmd.com page 7 of 10
AON6928 q2-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 10ms 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c operating area (note f) (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =3.8 c/w rev 0 : nov. 2012 www.aosmd.com page 8 of 10
AON6928 q2-channel: typical electrical and thermal characteristics 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) figure 14: single pulse power rating junction - to - ambient (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =60 c/w rev 0 : nov. 2012 www.aosmd.com page 9 of 10
AON6928 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 0 : nov. 2012 www.aosmd.com page 10 of 10
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